화학공학소재연구정보센터
Journal of Crystal Growth, Vol.251, No.1-4, 29-34, 2003
A simple model for MBE growth controlled by group III atom migration
A model that simulates group III atoms of various migration lengths is presented. A number of real MBE growth phenomena have been simulated, including RHEED oscillations and the effect of migration length on the size of dots. (C) 2003 Elsevier Science B.V. All rights reserved.