||The growth characteristics of GaInNAs quantum dots by chemical beam epitaxy have been investigated to form uniform and high density dot for high nitrogen (N) composition. The dot density and size were strongly affected by the N composition and the growth temperature. The dot density was increased by increase of N up to 1%, while, the dot density was decreased and the size uniformity became worse over 1% of N at growth temperature above 480degreesC. At 1.5% of N, wire-like islands were observed at 540degreesC of the growth temperature, on the other hand, the highest dot density of 1.4 x 10(11) cm(-2) was obtained at 450degreesC. These phenomena are considered due to the change of the migration length. Low growth temperature is essential to form GaInNAs dots for high N composition. (C) 2002 Elsevier Science B.V. All rights reserved.