InGaAsN-based materials are being developed at IQE, Inc. for 1.3 mum laser applications. Both MBE and MOCVD growth technology are employed and under investigation for commercial viability. The MBE effort focuses on optimizing the process for the large-volume manufacturing environment. The PL efficiencies of InGaAsN QWs grown with different nitrogen sources on single and multi-wafer MBE platforms are compared. The effect of various annealing treatments on the PL intensity and wavelength uniformity is also discussed in detail. The PL intensity of MBE-grown InGaAsN QWs is inferior to the efficiency of MOCVD samples emitting below 1.29 mum. MOCVD samples, however, exhibit a faster decay of the PL intensity with increasing wavelength, and loose their advantage above 1.29 mum. Deep and shallow ridge-waveguide lasers emitting at 1.28 mum were processed from the MBE material and the laser characteristics are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.