We proposed a growth technique for III-V-N alloys with high quality and nitrogen composition, which was the low-temperature growth under atomic hydrogen irradiation. In the growth of GaPN, nitrogen compositions higher than 6% were obtained at growth temperatures lower than 350degreesC. GaAsPN alloys grown on GaP substrates were examined using X-ray diffraction and transmission electron microscopy. It was found that structural crystalline quality of a GaAsyP0.93-yN0.07 layer grown at 350degreesC was improved by atomic hydrogen irradiation. Photoluminescence was obtained from a GaAs0.33P0.60N0.07/GaP double heterostructure lattice matched to a GaP substrate. (C) 2002 Elsevier Science B.V. All rights reserved.