InAs quantum wells clad by AlSb barriers contain an unintentional electron density of approximately 1 X 10(12) cm(-2). This report concerns the compensation of these electrons by p-type modulation doping with Be. The electron concentration in the InAs quantum well decreases linearly with increasing Be doping as expected from lever rule arguments. Hall measurements show that the electron mobility increases with increasing electron concentration at temperatures between 10 and 300 K. These findings need to be considered in the design of field-effect transistors based on this material system. (C) 2003 Elsevier Science B.V. All rights reserved.