Molecular beam epitaxy and electroluminescence properties of InAs-based quantum cascade light emitting structure containing an InAs double plasmon waveguide are reported. Samples are prepared using low group-V flux and controlled interface bonds during molecular beam epitaxy resulting in high structural and optical qualities. Electroluminescence measurements indicate that it is necessary to reduce the operating electric fields to avoid band-to-band tunneling in narrow gap semiconductor cascade devices. (C) 2002 Elsevier Science B.V. All rights reserved.