Tantalum pentoxide (Ta2O5) films with high <001> orientation have exceptionally high dielectric constant. Usually, oriented Ta2O5 films were fabricated by post-annealing. In this paper, as-deposited Ta2O5 films with high <001> orientation were sputtered at low temperature with substrate bias. The orientation of the films is modified to be better with the bias being increased. The bias effect on the orientation of the films is discussed in details. (C) 2003 Elsevier Science B.V. All rights reserved.