Well-aligned carbon nanotube (CNT) array grown on Si-based nanoscale SiO2 islands was obtained by microwave plasma-enhanced chemical vapor deposition under low temperature of 520degreesC. Atomic force microscope observation and Raman spectroscopic analysis disclosed the formation of the CNTs. The SiO2 islands formed by excess anodization of Si-based Al film. were found to be the growth points of the CNTs, which was confirmed by the C-V curves without charge characteristics. Position-controllable growth of CNTs was attempted on silicon substrate so as to explore significant applications in nanoelectronics and nanodevices. (C) 2003 Elsevier Science B.V. All rights reserved.