In this paper we present the first results from processing and characterisation, of epitaxial tungsten carbide films. The films were deposited in ultra-high vacuum by DC magnetron sputtering of tungsten with co-evaporated C-60 as carbon source. It was found that the growth rate was crucial for the crystalline film quality. Epitaxial growth of beta-WC1-x could be achieved at 400degreesC using a very low deposition rate of 6 Angstrom/min. Single-crystal films were thus. formed on both MgO(1 0 0) and MgO(1 1 1). High-resolution transmission electron microscopy shows that the films. grow with a very good match relative the substrate. Deposition rates of 10 Angstrom/min and higher resulted in renucleation and nanocrystalline growth with grain sizes of 15-80 Angstrom depending on substrate temperature. We have also found that a small addition of titanium stabilises the epitaxial growth of the cubic tungsten carbide films at higher growth rates. A titanium contribution of similar to2% give epitaxial growth at deposition rates of 40 Angstrom/min. X-ray diffraction study of the epitaxial films using reciprocal space mapping shows a cross-like broadening that is possibly related to ordering. (C) 2003 Elsevier B.V. All rights reserved.