Mn-doped ZnGa2O4-xSex thin film phosphors have been grown using pulsed-laser ablation at the various growth conditions. Structural characterization was carried out on a series of ZnGa2O4-xSex:Mn2+ films grown on MgO(1 0 0) substrates using Zn-rich ceramic targets at various substrate temperatures and oxygen pressures. The films grown under different conditions not only have different crystallinity and surface morphology but also different Zn/Ga composition ratio. The luminescent results indicated that MgO (10 0) is one of the most promised substrates for the growth of high quality ZnGa2O4-xSex:Mn2+ films and the luminescent brightness is sensitive to the substrate temperature and oxygen pressure. In particular, the incorporation of Se into ZnGa2O4:Mn2+ lattice induced a remarkable increase of photoluminescence (PL). The highest green emission intensity was observed with ZnGa2O3.925Se0.075:Mn2+ films, whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa2O4:Mn2+ films. This phosphor is promising for applications in flat panel displays. (C) 2003 Elsevier B.V. All rights reserved.