In this paper, we present the results of Ge deposition on a pre-pattemed Si surface. By partially overgrowing nanometer-sized electron beam-induced carbon deposits, faceted pits form at the Si surface and well-defined arrays of self-assembled Ge dots can be grown site selectively in and around those. Typically, four closely spaced Ge islands are formed by preferential nucleation around the pits. By varying the pattern of C-deposits a manifold of different arrays can be obtained. (C) 2003 Elsevier B.V. All rights reserved.