p-Type ZnO thin films were prepared by oxidation of Zn3N2 thin films. The Zn3N2 thin films were deposited by reactive DC magnetron sputtering using pure zinc disk as target and Ar-N-2 mixture as working gas. For oxidation temperature between 350degreesC and 500degreesC, p-type ZnO thin films were obtained, with a hole concentration as high as 5.78 x 10(17) cm(-3) at 500degreesC, but for oxidation temperature at 550degreesC, n-type ZnO film was obtained. (C) 2003 Elsevier B.V. All rights reserved.