We employ a computational model to revisit the classic crystal growth experiments conducted by Kim et al. (J. Electrochem. Soc. 119 (1972) 1218) and Muller et al. (J. Crystal Growth 70 (1984) 78), which were among the first to clearly document the effects of flow transitions on segregation. Analysis of the growth of tellerium-doped indium antimonide within a destabilizing vertical Bridgman configuration reveals the existence of multiple states, each of which can be reached by feasible paths of process operation. Transient growth simulations conducted on the different solution branches reveal striking differences in hydrodynamic and segregation behavior. We show that crystals grown in the destabilizing configuration exhibit considerably better radial segregation than those grown in the stabilizing configuration, a result which challenges conventional wisdom and practice. (C) 2003 Elsevier B.V. All rights reserved.