AlGaAs-based strained separately confined heterostructure laser diodes operating in the 800-900 nm wavelength range have been fabricated from the structures grown using low temperature liquid-phase epitaxy (LPE). Addition of P/Sb to the active region introduces tensile/compressive strain in the structure and is found useful in tuning the emission wavelength. Details of the growth experiments, strain measurements, fabrication and characterization of the laser diodes are described. (C) 2003 Elsevier B.V. All rights reserved.