Cd1-xZnxS films with 0less than or equal toxless than or equal to0.18 were grown by chemical bath deposition technique on glass substrates from an aqueous solution containing cadmium and zinc sulfate, ammonia and thiourea. Microstructural features, obtained from X-ray diffraction and scanning electron microscopy (SEM) measurements, reveal a predominance of Wurtzite structure and an homogenous microstructure formed by densely microcrystallines for all the samples studied. Cd1-xZnxS semiconductor was found to be resistive and of n-type. Also, the electron density decreases with increased x and the mobility reaches a maximum around x = 0.12. Which means that the Cd1-xZnxS films at this composition are of high crystalline quality, i.e. having reduced intrinsic defect concentrations. (C) 2003 Elsevier B.V. All rights reserved.