Detached solidification of lightly gallium-doped indium antimonide was achieved in the laboratory only when the ampoule was coated with hexagonal boron nitride and when the material appeared to be oxide-free. A furnace was constructed with the temperature increasing with height in order to minimize bouyancy-driven convection, so as to maximize transport of segregated dissolved gases into the gap between the growing solid and the ampoule wall. There appeared to be no difference in results with freezing rates of 5 and 10mm/h. Best results were obtained when the ampoule was backfilled with 20 kPa of Ar-10% H-2 prior to sealing. The detached portions were depressed by several Pm from adjacent attached regions, were dull, and sometimes had microfacets and steps. (C) 2003 Elsevier B.V. All rights reserved.