화학공학소재연구정보센터
Journal of Crystal Growth, Vol.261, No.2-3, 280-288, 2004
Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry
MOCVD was used to deposit tungsten nitride thin films from solutions of Cl-4(CH3CN)W((NPr)-Pr-i) in 1,2-dichlorobenzene (1,2-DCB). Results were compared to previous depositions from benzonitrile (PhCN) solutions in order to determine whether the solvent affected deposition of carbon into the films. The rate of carbon deposition was solvent-dependent, with apparent activation energies in films from PhCN and 1,2-DCB solutions being 0.70+/-0.10eV and 1.0+/-0.14eV, respectively. Residual gas analysis results were consistent with solvent decomposition in the reactor, and increased nitrogen levels for films from PhCN solutions suggest that the nitrile (CN) group was a significant carbon source. (C) 2003 Elsevier B.V. All rights reserved.