A growth method which uses group III (triisopropylindium and triisobutylgallium) and V (trisdimethylarsenic) metalorganic molecules with hyperthermal energies has been developed for the growth of GaAs and InAs quantum dots (QDs). It grows uniform QDs with an extremely high density of 1 x 10(14)cm(-2), which cannot be attained using Stranski-Krastanov (S-K) growth mode. GaAs and InAs QDs grown by this technique show a sharp and strong emission peak in the photoluminescence spectra, suggesting that the dots are very uniform in size and have good quality. It is demonstrated that the growth mechanism is quite different from that of the S-K growth mode. (C) 2003 Elsevier B.V. All rights reserved.