Journal of Crystal Growth, Vol.262, No.1-4, 281-286, 2004
Epitaxial growth of CrSi2 on Si(001) by template technique
This paper reports on the structural investigation of CrSi2 layers grown on Si(0 0 1) by MBE using the template technique. The nominal thickness of the thin Cr layer, deposited to create the CrSi2 template, was varied from 0.2 to 0.5 nm. The highest degree of texture was observed in silicide films, which were grown on the template formed by the deposition of 0.4 nm Cr. This film consists of regions with two different morphologies. Correspondingly two different epitaxial orientations were observed. The major part of the CrSi2 crystallites grows with CrSi2(0 0 1)[1 0 0]\\ Si(0 0 1)[1 1 0]. A smaller part of the layer consists of crystallites oriented with CrSi2(1 1 2)[1 (1) over bar 0]\\(0 0 1)[1 1 0]. Two perpendicular domains were observed for each orientation, which can be explained according to the crystal symmetry of the film and the substrate. (C) 2003 Elsevier B.V. All rights reserved.