Journal of Crystal Growth, Vol.263, No.1-4, 273-282, 2004
A two-stage technique for single crystal growth of HgCdTe using a pressurized Bridgman method
A two-stage technique has been used to grow large diameter Hg1-xCdxTe crystals (x = 0.214) using a pressurized Bridgman (P-Bridgman) method, with a starting charge of x = 0.06. The two-stage technique has enabled the growth of large crystalline ingots of HgCdTe 40 mm in diameter at the very low growth temperature of 680-720degreesC. It was shown that the HgCdTe crystal had a homogeneous composition of x = 0.214 along the growth direction. (C) 2003 Elsevier B.V. All rights reserved.