Neodymium-doped Bi4Ti3O12 (Bi3.15Nd0.85Ti3O12) films have been synthesized by metalorganic solution decomposition method and deposited on SiO2/p-Si(111) substrate by spin coating. The structural characteristic and crystallization of the films were examined by X-ray diffraction. The surface morphology and quality were studied using atomic force microscope. The films exhibit good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 2.5V. The dielectric constant and dissipation factor at a frequency of 100kHz are 110 and 0.137, respectively, at room temperature. (C) 2004 Elsevier B.V. All rights reserved.