Samarium-substituted bismuth titanate (Bi3.5Sm0.5Ti3O12 (BSmT)) thin films have been grown on n-type Si (100) substrates by metalorganic decomposition method and spin-coating technique. X-ray diffraction analysis confirmed that the crystallinity of the films increases with increasing annealing temperature and the optimum temperature was found to be 700degreesC. The Raman measurement showed an increase in structural distortion due to the changed ionic radius and atomic mass of Sm ions. The electrical measurements were conducted on metal-ferroelectric-semiconductor (MFS) capacitors. The current-voltage characteristics displayed good insulating properties for a film annealed at 700degreesC for I h. The capacitance-voltage characteristic hysteresis curves revealed that the MFS structure had a memory effect. (C) 2004 Elsevier B.V. All rights reserved.