Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Chriqui Y; Largeau L; Patriarche G; Saint-Girons G; Bouchoule S; Sagnes I; Bensahel D; Campidelli Y; Kermarreeb O

Journal of Crystal Growth, Vol.265, No.1-2, 53-59, 2004

DOI10.1016/j.jcrysgro.2004.01.038 Export Citation

Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Chriqui Y, Largeau L, Patriarche G, Saint-Girons G, Bouchoule S, Sagnes I, Bensahel D, Campidelli Y, Kermarreeb O

The effects of atomic layer epitaxy (ALE) on the surface Morphology, the antiphase boundaries (APBs) and the dislocation density of GaAs grown on exactly (001)-oriented Ge/Si virtual substrates (VS) have been investigated. ALE combined with the insertion of a low temperature (<500degreesC) GaAs buffer layer led to a drastic reduction of the APBs and of the dislocation density (<5 x 10(5) cm(-2)), and to a reduction of the surface roughness, thus leading to an important improvement of the photo luminescence yield of InGaAs quantum well (QW) based structures. Light emitting diodes (LEDs) containing InGaAs/GaAs QWs have been realised on exactly (00 I)-oriented Ge/Si VS. We observed room-temperature continuous wave operation from these LEDs. (C) 2004 Elsevier B.V. All rights reserved.

Keywords:antiphase boundary;growth mechanism;atomic layer epitaxy;metalorganic vapor phase epitaxy