The article presents a mathematical model for liquid-phase electroepitaxial lateral overgrowth of semiconductor layers. The computed electric field in the growth system can accurately predict electric current intensity distribution under various growth conditions. The concentration boundary conditions at the growth interface and along the mask are obtained from the overall mass balance. This condition gives the solute distribution in the liquid solution and the growth rate. Kinetics on the upper layer surface and the Gibbs-Thompson effect on the entire growth interface are also taken into account. The model allows for direct simulation of the evolution of the growth interface with time. Taking GaAs on GaAs system as an example, it is shown that by varying the electrical conductivity of the mask the shape and dimensions of epilayers grown by electroepitaxy can efficiently be tailored. In particular, dome-shaped crystals Call be grown if an insulating mask is applied, while thin and wide epilayers are obtained when an electrically conductive mask is used, under the same growth conditions. These results Lire in very good agreement with experiments. (C) 2004 Elsevier B.V. All rights reserved.