The simulation of boron effects on oxidation-induced stacking fault (OISF) ring is carried out for the Czochralski silicon growth. The simulation is based on either the reaction/diffusion model [Sinno et al., App. Phys. Lett. 75 (1999) 1544] or the electronic-shift model [Voronkov and Falster, J. Appl. Phys. 87 (2000) 4126], while the global heat transfer is simulated by using STHAMAS. The calculated critical V/G values with and without boron doping are in good agreement with the reported values for both models; V is the pulling rate and G the thermal gradient on the ring position at the interface. Nevertheless, for a reasonable prediction by the reaction/diffusion model, the equilibrium concentrations of boron/point-defect pairs need to be several orders larger than the predictions by molecular dynamic simulation. A simplified model without considering the boron dimmers (B-2) and their associated pairs gives a good prediction as well. On the other hand, the electronic-shift model requires only a single parameter to fit the experimental results. For the electronic-shift model, the ratio of the equilibrium vacancy and self-interstitial concentrations is crucial, while the ratio of their formation energies is found insignificant, but this is not true for the reaction/diffusion model. (C) 2004 Elsevier B.V. All rights reserved.