화학공학소재연구정보센터
Journal of Crystal Growth, Vol.266, No.1-3, 381-387, 2004
Finite element method for epitaxial island growth
We present an adaptive finite element method for epitaxial island growth. The problem consists of an adatom diffusion equation on terraces of different height; boundary conditions on steps including the kinetic asymmetry in the adatom attachment and detachment; and the normal velocity law for the motion of the steps determined by a two-sided flux, together with diffusion of edge-adatoms along the steps. The problem is solved using two independent meshes: a two-dimensional mesh for the adatom diffusion and a one-dimensional mesh for the boundary evolution. Some applications demonstrating the influence of the Ehrlich-Schwoebel and inverse Ehrlich-Schwoebel barrier and the anisotropy are shown. (C) 2004 Elsevier B.V. All rights reserved.