Journal of Crystal Growth, Vol.266, No.4, 461-466, 2004
Single crystal growth of GaN by the temperature gradient Na flux method
GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800degreesC). Colorless transparent platelet single crystals having a size of about 2 mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0 0 0 2) reflection of the crystals was 40-60 arcsec, showing that the crystals have a good quality. (C) 2004 Elsevier B.V. All rights reserved.
Keywords:growth from solutions;single crystal growth;gallium compounds;nitrides;semiconducting III-V materials