Compositionally graded structure of Pb(ZrxTi1-x)O-3 (PZT) thin films with Zr/Ti ratio from 10/90 to 40/60 grown on PbZrO3 buffered Pt/Ti/SiO2/Si substrates were prepared by a simple sol-gel process. The structure, surface morphology and dielectric properties of the graded PZT films were measured by X-ray diffraction, field-emission scanning electron microscopy, Auger electron spectroscopy and by using an impedance analyzer. The results showed that the graded PZT films on PbZrO3 buffered Pt/Ti/SiO2/Si substrates have a preferred (1 1 1) orientation. At 100 Hz, the dielectric constant and dissipation factor of the graded PZT film are 255 and 0.032, respectively. The pyroelectric coefficient (p) of compositionally graded PZT film was measured by a dynamic technique. At 25degreesC, the p-value of the graded PZT film is 349 muC/m(2) K, and the figure of merit of specific detectivity (F-D) is 16.4 x 10(-6) Pa-0.5 at 100 Hz. (C) 2004 Elsevier B.V. All rights reserved.