Journal of Crystal Growth, Vol.267, No.1-2, 161-165, 2004
Residual stress in beta barium borate (beta-BaB2O4) thin films grown by liquid phase epitaxy
beta-BBO thin films have been prepared by LPE at different temperatures with various rotation rates on Sr2+-doped alpha-BBO substrates. From the measurement of X-ray diffraction, we have found that the films show a highly (0 0 1) preferred orientation. The influences of the growth temperature and rotation rate on the residual stress and thermal stress have been studied. The results show that residual stress in beta-BBO thin films is compressive but the thermal stress is tensile, which means the thermal stress of the films is not the domain factor on the residual stress. (C) 2004 Elsevier B.V. All rights reserved.