High-performance MOCVD-grown N-p-N InP/GaAsSb/InP DHBTs based on epitaxial layers deposited on 100 mm InP substrates are reported. The transistors feature the first nearly ideal emitter/base junction characteristics reported for material grown using AsH3 and PH3 hydride precursors, a DC current gain beta = 30-40, and a peak cutoff frequency f(T) = 245 GHz for a 0.5 x 12 mum(2) emitter fabricated on a 250Angstrom lattice-matched carbon-doped base. We discuss layer composition and thickness uniformity, C-doping efficiency as determined by the comparison of SIMS and Hall effect data on bulk GaAs0.5Sb0.5 layers, as well as provide SIMS and TEM data for the transistor layers (including a lattice image of the interface between GaAsSb and InP). To our knowledge, the present article provides the first detailed characterization of high-speed InP/GaAsSb/InP DHBTs fabricated on industrially grown epitaxial layers. (C) 2004 Elsevier B.V. All rights reserved.