La2Ti2O7 ferroelectric thin films were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. A low electric field (1-2 V/cm) was in situ applied during the film crystallization. It was first found that the impact of in situ applied low electric field annealing has significant influence on the structures and surface morphologies of La2Ti2O7 films. The applied low electric field decreases crystallization temperature by 50-100degreesC and increases grain size from similar to 140 to 300 nm. As a possible origin is proposed that the electric energy provides an extra driving force for the growth of the La2Ti2O7 grains. An in situ applied low electric field annealing during the film crystallization is a promising technique adjusting film growth for wet chemical method. (C) 2004 Elsevier B.V. All rights reserved.