We report the fabrication of In0.22Ga0.78As/GaAs, single quantum well circular ring lasers with an integrated output stripe (two cleaved facets) by using laser direct writing lithography, wet chemical etching and subsequent pulsed anodic oxidation. The laser works under continuous wave operation at room temperature with a low threshold current density of 80 A/cm(2), a slope efficiency of 0.26/W/A per facet. (C) 2004 Elsevier B.V. All rights reserved.