AlGalnP/GalnP multiple quantum well laser structure was grown by low-pressure metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine. Photoluminescence (PL) measurements were performed from 10 to 230 K. The PL energy increased with temperature from 10 to 70 K and decreased above 70 K. The former was attributed to thermal activation of trapped carriers due to localization in the quantum wells, while the latter was attributed to temperature-induced band-gap shrinkage. The PL intensity as a function of temperature was fitted by employing two nonradiative recombination mechanisms with good agreement, resulting in two activation energies that correspond to losses of photogenerated carriers to nonradiative centers. (C) 2004 Elsevier B.V. All rights reserved.