Electron mobility in indium nitride is computed for the temperature of 300 and 500K, taking into account all the scattering mechanisms, degeneracy, screening and the energy-band nonparabolicity. The band gap, effective mass, static dielectric constant and high-frequency dielectric constant are taken as 0.7, 0.05, 11 and 6.7 eV, respectively. The results are significantly different from those obtained earlier. Experimental results may be explained by assuming that the concentration of ionized impurities or charged point defects lie between two and five times the electron concentration. (C) 2004 Published by Elsevier B.V.