InN-based dilute magnetic semiconductor DMS In1-xMnxN and In1-xCrxN films were prepared on Al2O3 substrates at low temperature by RF-plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction, X-ray diffraction and atomic force microscopy show Mn was homogeneously incorporated into InN up to 4% and 10%, respectively, at 300degreesC and 200degreesC, while Cr was incorporated up to 4% at 300degreesC. In1-xMnxN films with Mn composition x = 0.04 showed a paramagnetic behavior at low temperature, whereas a paramagnetic to spin-glass transition was observed at 3 K in In0.9Mn0.1N films grown at lower temperature (200degreesC). Homogeneous In0.98Cr0.02N films grown at 300degreesC showed clear ferromagnetic properties with Curie temperature higher than 350 K. (C) 2004 Elsevier B.V. All rights reserved.