In-rich InGaN quantum dot structures were grown by metalorganic chemical vapor deposition. Growth at low temperature made possible the growth of InGaN layers of high In content (over 70 InN%) with negligible formation of In metal droplets. The density, average diameter and height of typical InGaN quantum dots (QDs) were estimated at 8 X 10(9)/cm(2), 80 and 1.2 nm, respectively. The emission wavelength from the QDs could be controlled to the near ultraviolet (UV) region by variation of the growth conditions. This work demonstrates that In-rich InGaN QD active layers are very promising device structures for application as UV light-emitting diodes. (C) 2004 Elsevier B.V. All rights reserved.