Coatings of beta-SiC were prepared from the methyltrichlorosilane by low-pressure chemical vapor deposition (CVD) onto the graphite substrates. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) methods. The surface morphology of CVD SiC shows pyramid structure and (111) plane is the preferred orientation in the XRD pattern. HRTEM results show that SiC crystal grows according to the preferred orientation of the substrate at the beginning of the deposition, and then the crystal adjusts the growth to (111) plane. (C) 2004 Elsevier B.V. All rights reserved.