Journal of Crystal Growth, Vol.270, No.1-2, 179-183, 2004
Vertical Bridgman growth of Hg1-xMnxTe with variational withdrawal rate
Based on the solute redistribution models, Vertical Bridgman growth of Hg1-xMnxTe with variational withdrawal rate is studied. Both theoretical analysis and experimental results show that the axial composition uniformity is improved and the crystal growth rate is also increased at the optimized variational method of withdrawal rate. (C) 2004 Elsevier B.V. All rights reserved.
Keywords:Segregation;Bridgman technique;growth from melt;single crystal growth;semiconducting ternary compounds;semiconducting II-VI materials