Indium phosphide, gallium arsenide phosphide, and aluminum indium phosphide have been deposited by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and tertiarybutylarsine. The effects of growth temperature and V/III ratio on the amount of silicon, sulfur, carbon, and oxygen in InP have been determined. Minimum incorporation was observed at 565degreesC and a V/III ratio of 32. In this case, the material contained a background carrier concentration of 2.7 x 10(14) cm(-3), and the Hall mobilities were 4970 and 135,000 cm(2)/V s at 300 and 77 K. The oxygen contamination in AlInP was found to be only 9.0 x 10(15) cm(-3) for deposition at 650 degreesC and a V/III ratio of 35. The relative distribution of arsenic to phosphorus in GaAsyP1-y was determined at temperatures between 525 and 575 degreesC. The distribution coefficient [(N-As/N-P)(film)/(P-TBAs/P-TBP)(gas)] ranged from 25.4 to 8.4, and exhibited an Arrhenius relationship with an apparent activation energy of 1.2 eV. (C) 2004 Elsevier B.V. All rights reserved.