Epitaxially twinned (0 2 8)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on GaN(0 0 2)/Al2O3 (0 0 0 6) substrates by pulsed laser deposition. The BLT layer deposited on GaN substrate showed sixfold-like symmetric peaks in a phi scan of (0 0 6) reflection and 12 peaks in that of the (1 1 7) reflection. In order to investigate hetero-epitaxial growth, origin of six and 12 peaks in the phi scan, and the domain structure of the BLT thin film, the X-ray analysis including theta-2theta,omega,phi scan, and pole figure measurement were performed. The hetero-epitaxial growth was studied by atomic arrangements and domain distribution with calculated lattice mismatch, interplanar angles, and atomic distances.(C) 2004 Elsevier B.V. All rights reserved.