We report entirely MOVPE-grown QCL lasers operating around 9 pm. High-resolution X-ray diffraction analysis and TEM data confirm precise thickness and composition control for the individual layers. Consequently, these MOVPE-grown QCLs demonstrate a pulsed mode performance comparable to similarly designed MBE-grown devices. QCLs having a conventional three-well active region design exhibit a threshold current density of similar to 1.5 kA cm(-2) at 12 K and continue to lase up to room temperature. Furthermore, QCLs designed with a four-QW double-phonon active region show a threshold current density as low as 880 A cm(-2) at 12 K and 3.75 kA cm(-2) at 300 K with peak powers in excess of 1 W. (C) 2004 Elsevier B.V. All rights reserved.