GaAsSbN is a potential material for GaAs-based long wavelength optoelectronic devices. In this work, using solid source molecular beam epitaxy in Conjunction with a radio frequency plasma-assisted nitrogen source and a antimony cracker Source, we will demonstrate closely lattice-matched condition of GaAsSbN/GaAs with lattice mismatch < 1000 ppm. Closely lattice-matched GaAsSbN/GaAs samples were obtained which showed room temperature and 4 K photoluminescence emission at similar to 1300 nm, with N and Sb concentration of similar to 2.3% and similar to 7%, respectively. Competitive incorporation of Sb and N was observed, as the presence of Sb promotes N incorporation. This competition enhances Sb-surfactant effect observed in GaAsSbN layer grown with a slight compressive strain. (C) 2004 Elsevier B.V. All rights reserved.