Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

Cheah WK; Fan WJ; Yoon SF; Ng TK; Loke WK; Zhang DH; Mei T; Liu R; Wee ATS

Journal of Crystal Growth, Vol.275, No.3-4, 440-447, 2005

DOI10.1016/j.jcrysgro.2004.12.020 Export Citation

Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

Cheah WK, Fan WJ, Yoon SF, Ng TK, Loke WK, Zhang DH, Mei T, Liu R, Wee ATS

The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis. (c) 2004 Elsevier B.V. All rights reserved.

Keywords:high resolution X-ray diffraction;photoluminescence;secondary ion mass spectroscopy;molecular beam epitaxy;GaAsN;InGaAsN