ZnO nanorods with diameter 30-300 nm were synthesized by a pulsed laser deposition process in a hot-wall type chamber at the elevated temperatures above 800 degrees C. At temperatures 500-800 degrees C, ZnO thin films and wrinkles were synthesized. Above 800 degrees C, vertically aligned ZnO nanorods were grown on the Si and sapphire substrate without any catalysts. The range of diameter was 100-300 nm. When An catalyst were deposited on the substrate prior to the deposition, the process range of ZnO nanorod become wider and the diameter of ZnO smaller. Especially, ZnO could be grown selectively along the pattern of An catalyst with the aid of Au-Zn alloy. The feasibility of doping of P, as a p-type dopant, was identified with this hot-wall type and high-temperature compatible process. (c) 2004 Elsevier B.V. All rights reserved.