We investigated photoluminescence (PL) characteristics of InAs quantum dots (QDs) with Sb irradiation in growth interruption. Various Sb-introduction procedures in the interface below and above QD were studied. It was found that the Sb irradiation in the interface between the QD and cover layer was effective to elongate an emission wavelength of QDs with high emission efficiency. Sb-irradiation for a short time just before the cover layer growth improved PL properties. © 2005 Elsevier B.V. All rights reserved.