AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Cordier Y; Semond F; Hugues M; Natali F; Lorenzini P; Haas H; Chenot S; Laugt M; Tottereau O; Vennegues P; Massies J

Journal of Crystal Growth, Vol.278, No.1-4, 393-396, 2005

DOI10.1016/j.jcrysgro.2005.01.038 Export Citation

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Cordier Y, Semond F, Hugues M, Natali F, Lorenzini P, Haas H, Chenot S, Laugt M, Tottereau O, Vennegues P, Massies J

In this paper, we report on the properties of AlGaN/GaN/AlGaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the AlGaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, the static performances of long gate length devices demonstrate their interest for power applications. © 2005 Elsevier B.V. All rights reserved.

Keywords:molecular beam epitaxy;nitrides;high electron mobility transistors