Epitaxial growth of a novel chalcopyrite-type MnGeP2 has been investigated using an MBE technique. In order to improve the surface morphology of the films, an effect of introduction of a Ge buffer layer was investigated. This results in dramatic change of the RHEED pattern from spotty to streaky ones. Improvement of surface morphology was confirmed by SEM observation. We attribute the improvement to the crystallographic affinity of Ge with II-IV-V-2 compounds and atomically flat surface of the buffer layer. © 2005 Elsevier B.V. All rights reserved.