Carbon doping of In0.53Ga0.47As has been investigated in a production molecular beam epitaxy (MBE) system equipped with a CBr4 gas line. Growth temperature and As-4 flux effects on surface morphology and efficiency of carbon doping are studied. Hole concentrations from 1.7 x 10(17) to 1.3 x 10(20) cm(-3) have been obtained. A first set of samples shows no significant difference in mobility for comparable beryllium- and carbon-doping levels either in solid source production (Riber MBE49) or in gas source research (Riber MBE32) systems. Best results for carbon doping are obtained with a low As-4 flux and a growth temperature in the 400-425 ° C range. A nearly ideal emitter-base I(V) characteristic has been obtained for a doping level of 8 x 10(19) cm(-3), which is promising for high-frequency InP-based HBTs issue. © 2005 Elsevier B.V. All rights reserved.