Misfit dislocation was investigated by observing crosshatch over surfaces of InxGa1-xAs-In0.52Al0.48As strained multiple quantum wells (MQWs) and InxGa1-xAs bulk-like thin epifilms grown on InP substrates. It was found that no crosshatch was observed on surfaces of non-doped InxGa1-xAs-In0.52Al0.48As strained MQW over an In composition range of 0.32 < x < 0.78 and that Be-doped InxGa1-xAs bulk-like thin films were also crosshatch free over a wide range of 0.42 < x &LE; 1.0, which clearly exceeds the critical thickness limit. Surface and cross-sectional diagnostics and a preliminary result on the electron mobility of the crosshatch-free InAs bulk-like thin films were presented. © 2005 Elsevier B.V. All rights reserved.