Conventional strain -compensated quantum cascade (QC) lasers are fabricated with both tensile strained AlInAs and compressively strained GaInAs layers. We show that strain compensation can also be achieved using tensile strained AlInAs barrier layers and lattice-matched GaInAs with thin InAs layers inserted. In the present paper, we use Al0.6In0.4As as barriers. The tensile strain caused by these barriers is compensated by thin InAs layers inserted into the lattice-matched GaInAs wells. The lasers, mounted epilayer up with as-cleaved facets, operate in pulsed mode up to 400 K (127 ° C) at a wavelength of λ ∼ 5.3 μ m. For a laser with a ridge size of 18 pm x 3 mm, the maximum output peak power per facet obtained is I W at room temperature (27° C). © 2005 Elsevier B.V. All rights reserved.